Description
Transistor polarity: N-Channel Gate/source breakdown voltage: 25 V RDS (conduction) : 0.014 Ohms Drain/source breakdown voltage: 650 V Rds On- drain-source on-resistance: 9.3 mOhms Vgs - grid - source voltage: 20 V Installation style: Through Hole Package Including: 10pcs*IRFB4115PBF Hard Switched and High Frequency Circuits High Speed Power Switching Uninterruptible Power Supply High Efficiency Synchronous Rectification in SMPS NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability. We do not provide technical support, please familiarize yourself with the parameters and performance of the purchased products in advance. Sincerely apologize for you.