10Pcs FQP50N06 FQP50 50N06 N-Channel Mosfet Transistor 52 a 60 V,3-Pin TO-220AB
$ 6.84
Description
52A, 60V, RDS(on) = 0.022Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Special sealed bag packaging, easy to take 175°C maximum junction temperature rating These N-Channel enhancement mode power field effect transistors are produced proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Maximum Continuous Drain Current:50A Maximum Drain Source Voltage:60V Maximum Drain Source Resistance:21 mΩ Minimum Gate Threshold Voltage:1V Maximum Gate Source Voltage:-20 V, +20 V Maximum Power Dissipation:121 W Minimum Operating Temperature:-55 °C Maximum Operating Temperature:+175 °C Package include: 10pcs*FQP50N06 REVISED ON 11/11/2024
